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2N/PN/SST4391 Series
Vishay Siliconix
N-Channel JFETs
2N4391 2N4392 2N4393
PRODUCT SUMMARY
Part Number
2N/PN/SST4391 2N/PN/SST4392 2N/PN/SST4393
PN4391 PN4392 PN4393
SST4391 SST4392 SST4393
VGS(off) (V)
-4 to -10
-2 to -5 -0.5 to -3
rDS(on) Max (W)
30 60 100
ID(off) Typ (pA)
5 5 5
tON Typ (ns)
4 4 4
FEATURES
D Low On-Resistance: 4391<30 W D Fast Switching--tON: 4 ns D High Off-Isolation: ID(off) with Low Leakage D Low Capacitance: < 3.5 pF D Low Insertion Loss
BENEFITS
D D D D D Low Error Voltage High-Speed Analog Circuit Performance Negligible "Off-Error," Excellent Accuracy Good Frequency Response, Low Glitches Eliminates Additional Buffering
APPLICATIONS
D D D D D D Analog Switches Choppers Sample-and-Hold Normally "On" Switches Current Limiters Commutators
DESCRIPTION
The 2N/PN/SST4391 series features many of the superior characteristics of JFETs which make it a good choice for demanding analog switching applications and for specialized amplifier circuits. The 2N series hermetically-sealed TO-206AA (TO-18) can is available with processing per MIL-S-19500 (see Military Information). Both the PN, TO-226AA (TO-92), and SST, TO-236 (SOT-23), series are available in tape-and-reel for automated assembly (see Packaging Information). For similar dual products, see the 2N5564/5565/5566 data sheet.
TO-206AA (TO-18)
TO-226AA (TO-92) 1 D S 2 S 2 1
S 1
TO-236 (SOT-23)
D
3
G
2 D Top View 2N4391 2N4392 2N4393
3 G and Case
G
3
Top View PN4391 PN4392 PN4393
Top View SST4391 (CA)* SST4392 (CB)* SST4393 (CC)* *Marking Code for TO-236
For applications information see AN104 and AN106
. Document Number: 70241 S-04028--Rev. F, 04-Jan-01 www.vishay.com
7-1
2N/PN/SST4391 Series
Vishay Siliconix
ABSOLUTE MAXIMUM RATINGS
Gate-Drain, Gate-Source Voltage: (2N/PN Prefixes) . . . . . . . . . . . . . . . . . . . -40 V (SST Prefix) . . . . . . . . . . . . . . . . . . . . . . . -35 V Gate Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50 mA Lead Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300 _C Storage Temperature : (2N Prefix) . . . . . . . . . . . . . . . . . . -65 to 200 _C (PN/SST Prefixes) . . . . . . . . . . . -55 to 150 _C
Operating Junction Temperature : (2N Prefix) . . . . . . . . . . . . . . . . . . -55 to 200 _C (PN/SST Prefixes) . . . . . . . . . . . -55 to 150 _C Power Dissipation : (2N Prefix)a . . . . . . . . . . (TC = 25_C) 1800 mW (PN/SST Prefixes)b . . . . . . . . . . . . . . . 350 mW
Notes a. Derate 10 mW/_C above 25_C b. Derate 2.8 mW/_C above 25_C
SPECIFICATIONS (TA = 25_C UNLESS OTHERWISE NOTED)
Limits
4391 4392 4393
Parameter Static
Gate-Source Breakdown Voltage Gate-Source Cutoff Voltage Saturation Drain Currentb
Symbol
Test Conditions
Typa
Min
Max
Min
Max
Min
Max
Unit
V(BR)GSS VGS(off)
IG = -1 mA, VDS = 0 V VDS = 20 V VDS = 15 V 2N/PN: ID = 1 nA SST: ID = 10 nA 2N PN SST VGS = -20 V VDS = 0 V 2N/SST PN 2N: TA = 150_C PN: TA = 100_C SST: TA = 125_C
-55
-40 -4 50 50 50 -10 150 150
-40 -2 25 25 25 -100 -1000 -200 -200 -100 -1000 -200 -200 -5 75 100
-40 V -0.5 5 5 5 -100 -1000 -200 -200 nA pA -3 30 60 mA
IDSS
VDS = 20 V, VGS = 0 V
-5 -5 -13 -1 -3 -5 5 5 5 0.005 0.005 0.005 5 13 13 13 1 1 1 3 0.25 0.3 0.35
Gate Reverse Current
IGSS
Gate Operating Current
IG
VDG = 15 V, ID = 10 mA 2N: VGS = -5 V 2N: VGS = -7 V VDS = 20 V 2N: VGS = -12 V PN: VGS = -5 V PN: VGS = -7 V PN: VGS = -12 V SST VDS = 10 V, VGS = -10 V
100 100 100 1 1 1 100 100 100 200 200 200 200 200 200 nA pA nA pA
Drain Cutoff Current
ID(off) VDS = 20 V TA = 150_C
2N: VGS = -5 V 2N: VGS = -7 V 2N: VGS = -12 V PN: VGS = -5 V VDS = 20 V TA = 100_C VDS = 10 V TA = 125_C PN: VGS = -7 V PN: VGS = -12 V SST: VGS = -10 V ID = 3 mA
0.4 0.4 0.4 30 60 1 100 1 V W V
Drain-Source On-Voltage Drain-Source On-Resistance Gate-Source Forward Voltage
VDS(on)
VGS = 0 V
ID = 6 mA ID = 12 mA
rDS(on) VGS(F)
VGS = 0 V, ID = 1 mA IG = 1 mA VDS = 0 V 2N PN/SST 0.7 0.7
1
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7-2
Document Number: 70241 S-04028--Rev. F, 04-Jan-01
2N/PN/SST4391 Series
Vishay Siliconix
SPECIFICATIONS (TA = 25_C UNLESS OTHERWISE NOTED)
Limits
4391 4392 4393
Parameter Dynamic
Common-Source Forward Transconductance Common-Source Output Conductance Drain-Source On-Resistance Common-Source Input Capacitance
Symbol
Test Conditions
Typa
Min
Max
Min
Max
Min
Max
Unit
gfs VDS = 20 V, ID = 1 mA, f = 1 kHz gos rDS(on) VGS = 0 V, ID = 0 mA , f = 1 kHz 2N Ciss VDS = 20 V, VGS = 0 V f = 1 MHz PN SST 2N: VGS = -5 V 2N: VGS = -7 V 2N: VGS = -12 V PN: VGS = -5 V Crss VDS = 0 V f = 1 MHz PN: VGS = -7 V PN: VGS = -12 V SST: VGS = -5 V SST: VGS = -7 V SST: VGS = -12 V
6 25 30 12 12 13 3.3 3.2 2.8 3.5 3.4 3.0 3.6 3.5 3.1 3 5 5 3.5 5 3.5 3.5 14 16 60 14 16 100 14 16
mS mS W
pF
Common-Source Reverse Transfer Capacitance
Equivalent Input Noise Voltage
en
VDS = 10 V, ID = 10 mA f = 1 kHz
nV Hz
Switching
2N/PN td(on) Turn-On Time tr td(off) Turn-Off Time tf VDD = 10 V VGS(H) = 0 V See Switching Circuit SST 2N/PN SST 2N/PN SST 2N/PN SST 2 2 2 2 6 6 13 13 NCB 15 20 30 20 35 50 ns 5 5 5 15 15 15
Notes a. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing. b. Pulse test: PW v300 ms duty cycle v3%.
Document Number: 70241 S-04028--Rev. F, 04-Jan-01
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7-3
2N/PN/SST4391 Series
Vishay Siliconix
TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED)
On-Resistance and Drain Current vs. Gate-Source Cutoff Voltage
100 rDS(on) - Drain-Source On-Resistance ( ) rDS @ ID = 1 mA, VGS = 0 V IDSS @ VDS = 20 V, VGS = 0 V 80 IDSS 120 160 200 rDS(on) - Drain-Source On-Resistance ( ) IDSS - Saturation Drain Current (mA) 100
On-Resistance vs. Drain Current
TA = 25_C
80 VGS(off) = -2 V 60
60
rDS
40
80
40
-4 V -8 V
20
40
20
0 0 -2 -4 -6 -8 VGS(off) - Gate-Source Cutoff Voltage (V) -10
0
0 1 10 ID - Drain Current (mA) 100
On-Resistance vs. Temperature
200 rDS(on) - Drain-Source On-Resistance ( ) ID = 1 mA rDS changes X 0.7%/_C 160 4 tr 120 VGS(off) = -2 V 80 -4 V 40 -8 V Switching Time (ns) 3 5
Turn-On Switching
tr approximately independent of ID VDD = 5 V, RG = 50 W VGS(L) = -10 V
td(on) @ ID = 12 mA 2 td(on) @ ID = 3 mA
1
0 -55 -35
0 -15 5 65 25 45 TA - Temperature (_C) 85 105 125 0 -2 -4 -6 -8 VGS(off) - Gate-Source Cutoff Voltage (V) -10
30
Turn-Off Switching
td(off) independent of device VGS(off) VDD = 5 V, VGS(L) = -10 V
30
Capacitance vs. Gate-Source Voltage
f = 1 MHz VDS = 0 V
24 Switching Time (ns) Capacitance (pF)
24
18
VGS(off) = -2 V tf td(off)
18
12
12 Ciss 6 Crss 0
6 VGS(off) = -8 V 0 0 2 4 6 ID - Drain Current (mA) 8 10
0
-4 -8 -12 -16 VGS - Gate-Source Voltage (V)
-20
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7-4
Document Number: 70241 S-04028--Rev. F, 04-Jan-01
2N/PN/SST4391 Series
Vishay Siliconix
TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED)
Forward Transconductance and Output onductance vs. Gate-Source Cutoff Voltage*
50 VDS = 10 V gfs - Forward Transconductance (mS) 40 gfs and gos @ VDS = 20 V VGS = 0 V, f = 1 kHz 400 gos - Output Conductance (S) 500
Noise Voltage vs. Frequency
100
en - Noise Voltage nV /
Hz
30
gfs
gos
200
10 ID = 1 mA
20
200
ID = 10 mA
10
100
1 10 100 1k f - Frequency (Hz) 10 k 100 k
0
0
-4 -6 -8 VGS(off) - Gate-Source Cutoff Voltage (V)
-2
-10
0
Gate Leakage Current
10 nA IGSS @ 125_C TA = 125_C ID = 10 mA 100
Common-Gate Input Admittance
VDG = 10 V ID = 10 mA TA = 25_C
1 nA IG - Gate Leakage)
gig
100 pA
1 mA (mS) 1 mA
10 big
10 pA TA = 25_C 1 pA
10 mA
IGSS @ 25_C
1
IG(on) @ ID 0.1 pA 0 6 12 18 24 VDG - Drain-Gate Voltage (V) 30 0.1 100 200 500 f - Frequency (MHz) 1000
Common-Gate Forward Admittance
100 VDG = 10 V ID = 10 mA TA = 25_C -gfg 10 (mS) (mS) gfg bfg 1.0 10
Common-Gate Reverse Admittance
VDG = 10 V ID = 10 mA TA = 25_C
-brg
-grg
+grg
1
0.1
0.1 100 200 500 f - Frequency (MHz) 1000
0.01 100 200 500 f - Frequency (MHz) 1000
Document Number: 70241 S-04028--Rev. F, 04-Jan-01
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7-5
2N/PN/SST4391 Series
Vishay Siliconix
TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED)
Common-Gate Output Admittance
100 VDG = 10 V ID = 10 mA TA = 25_C bog 10 (mS) gog
Transconductance vs. Drain Current
100 VGS(off) = -2 V gfs - Forward Transconductance (mS) VDS = 10 V f = 1 kHz
TA = -55_C 25_C 10
1
125_C
0.1 100 200 500 1000
1 0.1 1.0 ID - Drain Current (mA) 10
f - Frequency (MHz)
Output Characteristics
100 VGS(off) = -4 V 80 ID - Drain Current (mA) ID - Drain Current (mA) 80 100
Transfer Characteristics
VGS(off) = -4 V VDS = 20 V
TA = -55_C 60 25_C 40
60
VGS = 0 V -0.5 V
40
-1.0 V -1.5 V
20
-2.0 V -2.5 V
20 125_C
0 0 2 4 6 8 10
0 0 -1 -2 -3 -4 -5
VDS - Drain-Source Voltage (V)
VGS - Gate-Source Voltage (V)
VDD
RL
SWITCHING TIME TEST CIRCUIT
4391 VGS(L) RL* ID(on) *Non-inductive -12 V 800 W 12 mA 4392 -7 V 1600 W 6 mA 4393 -5 V 3000 W 3 mA 1 k 51 VGS(L) VGS(H)
OUT
INPUT PULSE
Rise Time < 1 ns Fall Time < 1 ns Pulse Width 100 ns PRF 1 MHz
SAMPLING SCOPE
Rise Time 0.4 ns Input Resistance 10 MW Input Capacitance 1.5 pF
VIN Scope
51
See Typical Characteristics curves for changes. www.vishay.com Document Number: 70241 S-04028--Rev. F, 04-Jan-01
7-6
Legal Disclaimer Notice
Vishay
Disclaimer
All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, "Vishay"), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay's terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000 Revision: 18-Jul-08
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